New mechanism of excitonic enhanced optical gain for wide-gap quantum wellsUENOYAMA, T.Journal of electronic materials. 1996, Vol 25, Num 2, pp 173-176, issn 0361-5235Conference Paper

(111)B-oriented AlAs/GaAs/AlAs double barrier resonant tunneling devices grown in a gas source molecular beam epitaxy systemCONG, L; WILLIAMSON, F; NATHAN, M. I et al.Journal of electronic materials. 1996, Vol 25, Num 2, pp 305-308, issn 0361-5235Conference Paper

A theoretical study of light emission from nanoscale siliconHILL, N. A; WHALEY, K. B.Journal of electronic materials. 1996, Vol 25, Num 2, pp 269-285, issn 0361-5235Conference Paper

Tenth molecular-beam expitaxy workshop, 13-15 September 1989, Raleigh North CarolinaTAMARGO, Maria C.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 2, pp 137-386, issn 0734-211X, 249 p.Conference Proceedings

Formation of a thin III-VI compound interfacial layer at ZnTe/ZnSe heterojunction and its effect on energy band discontinuityYOSHIDA, T; NAGATAKE, T; KOBAYASHI, M et al.Journal of electronic materials. 1996, Vol 25, Num 2, pp 195-199, issn 0361-5235Conference Paper

Nondestructive analysis of structural defects in wide bandgap II-VI heterostructuresGOORSKY, M. S; LINDO, S. E; GUHA, S et al.Journal of electronic materials. 1996, Vol 25, Num 2, pp 235-238, issn 0361-5235Conference Paper

Effect of GaAs surface pretreatment on electrical properties of MBE-ZnSe/GaAs substrate interfacesSAWADA, T; YAMAGATA, Y; IMAI, K et al.Journal of electronic materials. 1996, Vol 25, Num 2, pp 245-251, issn 0361-5235Conference Paper

Effect of current reversal on the failure mechanism of Al-Cu-Si narrow interconnectsCHOONG-UN KIM; KANG, S. H; MORRIS, J. W et al.Journal of electronic materials. 1996, Vol 25, Num 2, pp 293-296, issn 0361-5235Conference Paper

Effects of GaAs buffer layer and lattice-matching on deep levels in Zn(S)Se/GaAs heterostructuresFUNATO, M; KITANI, H; FUJITA, S et al.FUJITA, S et al.Journal of electronic materials. 1996, Vol 25, Num 2, pp 217-222, issn 0361-5235Conference Paper

Characterization of surface roughness anisotropy on mismatched InAlAs/InP heterostructuresSINN, M. T; DEL ALAMO, J. A; BENNETT, B. R et al.Journal of electronic materials. 1996, Vol 25, Num 2, pp 313-319, issn 0361-5235Conference Paper

Elastic strain and enhanced light emission in dry etched Si/Si_1-xGe_x quantum dotsTANG, Y. S; SOTOMAYOR TORRES, C. M; KIBBEL, H et al.Journal of electronic materials. 1996, Vol 25, Num 2, pp 287-291, issn 0361-5235Conference Paper

Optical properties of Ge_1-yC_y alloysORNER, B. A; KHAN, A; HITS, D et al.Journal of electronic materials. 1996, Vol 25, Num 2, pp 297-300, issn 0361-5235Conference Paper

Quantitative scanning capacitance microscopy analysis of two-dimensional dopant concentrations at nanoscale dimensionsERICKSON, A; SADWICK, L; NEUBAUER, G et al.Journal of electronic materials. 1996, Vol 25, Num 2, pp 301-304, issn 0361-5235Conference Paper

Study on stacking faults and microtwins in wide bandgap II-VI semiconductor heterostructures grown on GaAsHUA, G. C; GRILLO, D. C; NG, T. B et al.Journal of electronic materials. 1996, Vol 25, Num 2, pp 263-267, issn 0361-5235Conference Paper

Growth of P-type ZnSe by metalorganic molecular beam epitaxy using metal Zn and dimethylselenideSUDA, J; TSUKA, M; HONDA, D et al.Journal of electronic materials. 1996, Vol 25, Num 2, pp 223-227, issn 0361-5235Conference Paper

MBE growth of lattice-matched ZnCdMgSe quaternaries and ZnCdMgSe/ZnCdSe quantum wells on InP substratesTAMARGO, M. C; CAVUS, A; LINFEI ZENG et al.Journal of electronic materials. 1996, Vol 25, Num 2, pp 259-262, issn 0361-5235Conference Paper

Role of cadmium in enhancing optical properties and chlorine doping of photo-assisted OMVPE-grown ZnSeGOKHALE, M. R; BAO, K. X; HEALEY, P. D et al.Journal of electronic materials. 1996, Vol 25, Num 2, pp 207-212, issn 0361-5235Conference Paper

Control of crystal orientation of CdTe epitaxial layers grown on (0 0 1 ) GaAs with ZnSe buffer layer by molecular beam epitaxyQIANG ZHANG; CHARTES, William; BINGSHENG LI et al.Journal of crystal growth. 2009, Vol 311, Num 9, pp 2603-2607, issn 0022-0248, 5 p.Article

Magnesium effects on CdSe self-assembled quantum dot formation on Zn_xCd_yMg_1-x-ySe layersNOEMI PEREZ-PAZ, M; HONG LU; AIDONG SHEN et al.Journal of crystal growth. 2006, Vol 294, Num 2, pp 296-303, issn 0022-0248, 8 p.Article

Molecular Beam Epitaxial Growth and Properties of Bi₂Se₃ Topological Insulator Layers on Different Substrate SurfacesZHIYI CHEN; GARCIA, Thor Axtmann; DE JESUS, Joel et al.Journal of electronic materials. 2014, Vol 43, Num 4, pp 909-913, issn 0361-5235, 5 p.Conference Paper

Contactless electroreflectance studies of II-VI nanostructures grown by molecular beam epitaxyMUNOZ, Martin; HONG LU; SHIPING GUO et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 3, pp 546-549, issn 0370-1972, 4 p.Conference Paper